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Trigger Unites
Highlights
*Economic
*Very easy to use
*Small size


*Powerful gate pulse triggers large and small thyristor
*Eliminates gate driver power supply
*Proven reliability in harsh industrial environment
Trigger Unites    
Absolute Maximum Ratings
Parameter
Symbol
Type
Unit
Peak voltage-positive and negative 
VP
1200
2000
V
Nominal main voltage 
VM
400
690
Vrms
Continuous DC voltage
V=
500
690
Vdc
Turn-on delay for gate current ＞1A
tgd
5
5
us
Input-output isolation
Vi
5300Vrms 60Hz 1min VDE0884
Input-output trnsient immunity 
(dv/dt)c
5000
V/μs
Device transient immunity 
(dv/dt)d
2000
V/μs
Ambient temperature range
Ta
-25 to +85
℃
External gate cathode short circuit during operation can be destructive
Technical Data at 25℃
Parameter
Symbol
Type
Unit
200mA gate current threshold
Vgtl
10
16
V
1.2A gate current threshold
Vgth
24
36
V
Gate current rise time at anode                    100V
Voltage of                                                           200V
                                                                            400V
                                                                            800V
                                                                          1200V
(di/dt)g
2.5
1.2
Aμ/s
3
2
A/μs
4
2.5
A/μs
6
3
A/μs
4
A/μs
Peak gate current (typical)
Ip
1.3
1.3
A
Anode-cathode current at Vp
In
4.4
5.1
Ma
Maximun of state gate current
Io
2*
2*
Ua
Minimum control current
Icm
7
7
mA
Recommended control current
Ic
12
12
mA
Control input voltage drop at 12mA
Vin
typ.1.2＜1.5
typ.1.2＜1.5
V
Maximum reverse control input voltage 
Vinr
6
6
V
Turn-on delay time at Ic=12mA
tdi
25
25
μs
Zero crossing threshold for PSTT ZC
Vzt
＜20
＜20
V
Products

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Trigger Unites

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POWER-SEM IGBT DRIVERS

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Links
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POWER-SEM ELECTRONIC TECHNIQUE CO.,LTD
Address: 5/F, Yilan Building, No.28 Huoju Street, Changping Park, Zhongguancun Science & Technology Park, Beijing, China.102200
Phone:+86 10 6970 1731; 6970 1577
Fax:
Mail: sales@power-sem.com

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