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IGBT Modules
Highlights
*Isolation voltage over 3000 V∼
*Planar glass passivated chips
*leads suitable for PC board soldering
*Thermistor (optional)
*Low saturation voltage
*Low switching losses
*Square RBSOA, no latch up
*High short circuit capability
*Positive temperature coefficient for easy parallelling
*MOS input, voltage controlled
*Ultrafast free wheeling diodes
*Epitaxial free wheeling diodes with fast and soft reverse recovery
*High Switching Speed
*UL registered, E 148688


Applications
*Low harmonic content of mains current
*Mains current and voltage in phase
*Supply of transformer primary winding
*Power supplies
*Welding inverters
*AC drives
*Electric braking operations
*UPS Systems
*PWM Drives
*High Frequency Inverters
*Motor Control
*Switch Mode Power Supplies
*High Frequency Welding
Type 
VCES
V
IC80 IC80
TC
80°C IGBT
A 
IF80 IF80
TC
80°C boost diode
A 
VRMM
V 
IC80 IC80
TC
80°C rect. diodes
A 
RthJC RthJC
IGBT
per diode
K/W 
RthJC 
RthJC 
IGBT Modules
600
25
22
1200
10
0.96
1.15
2.5
600
30
19
600
22
0.96
1.15
2.5

Type
Rectifier
IGBT 
fast Diode 

VRRM
V
IdAV @
A 
  
TH
°C 
VCES
V 
IC80
A 
VRRM
V 
IF(AV)
A 
trr
ns
 
PSDI 33/06*
600
29
80
600
30
600
18
30
PSDI 50/12
1600
56
100
1200
14
1200
10
110
IGBT Modules
Type




VCES
Voltage
Grade
V 

IC25
TC =
25°C IGBT
A 
IC80
TC =
80°C
IGBT
A 
VCE(sat)
Saturation
Voltage
(typical) Tj=25 °C
V 
Eoff 
Tj=125 °C
IGBT
mJ 
RthJC
IGBT
K/W 
IF25
TC =
25 °C DIODE
A
IF80
TC =
80 °C
DIODE
A
IGBT Modules
PSHI 25/06* 
600
24.5
17
2.4
0.5
1.52
18.5
12
PSHI 25/12* 
1200
30
21
2.6
2.1
0.96
26
17
PSHI 50/06* 
600
42.5
29
2.4
1
0.96
30
19
PSHI 50/12* 
1200
49
33
3.1
3.4
0.6
49
31
PSHI 50D/06* 
600
42.5
29
2.4
1
0.96
56
35
PSHI 50D/12* 
1200
49
33
3.1
3.4
0.6
49
31
PSHI 75D/06* 
600
69
48
2.3
1.4
0.6
56
35
PSHI 100/06* 
600
69
48
2.3
1.4
0.6
56
35
 
Type 
VCES

Voltage
Grade
V 
IC25
TC =
25°C
IGBT
A  
IC80
TC =
80°C
IGBT
A 
VCE(sat) VCE(sat)
Saturation
Voltage
(typical) Tj=25°C
V 
td(on) td(off)
delay time
Switching
Characte-ristics
ns  
RthJC
IGBT
K/W 

IF25
TC =
25 °C DIODE
A 
IF80
TC =
80 °C
DIODE
A  
RthJC
DIODE
K/W  
IGBT Modules
PSI 25/06*
PSI 25/12* 
600
1200
24.5
30
17
21
2.4
2.6
30   270
100   500
1.52
0.96
18.5
26
12
17
3.5
2.3
PSI 50/06*
PSI 50/12*
600
1200
42.5
49
29
33
2.4
3.1
50   270
100   500 
0.96
0.6
30
49
19
31
2.3
1.3
PSI 75/06*
PSI 75/12*
600
1200
69
92
48
62
2.3
2.7
50   300
100   500
0.6
0.33
56
103
35
65
1.3
0.66
PSI 100/06* 
600
93
63
2.4
150   450 
0.43
134
82
0.66
PSI 130/06* 
600
121
83
2.3
25   150 
0.33
134
82.3
0.66
IGBT Modules
PSIG 25/06
PSIG 25/12
600
1200
24.5
30
17
21
2.4
2.6
30   270
100   500
1.52
0.96
18.5
26
12
17
3.5
2.3
PSIG 50/06
PSIG 50/12 
600
1200
42.5
49
29
33
2.4
3.1
50   270
100   500
0.96
0.6
30
49
19
31
2.3
1.3
PSIG 75/06
PSIG 75/12
600
1200
69
92
48
62
2.3
2.7
50   300
100   500
0.6
0.33
56
103
35
65
1.3
0.66
PSIG 100/06
PSIG 100/12 
600
1200
93
138
63
94
2.4
2.8
150   450
100   650
0.43
0.22
134
154
82
97
0.66
0.45
PSIG 130/06 
600
121
83
2.3
25   150
0.33
134
82.3
0.66
PSIG 160/12 
1200
169
117
2.9
100   600
0.18
154
97
0.45
IGBT Modules
PSIS 25/06*
PSIS 25/12*
600
1200
24.5
30
17
21
2.4
2.6
30   270
100   500
1.52
0.96
18.5
26
12
17
3.5
2.3
PSIS 50/06*
PSIS 50/12*
600
1200
42.5
49
29
33
2.4
3.1
50    270
100   500
0.96
0.6
30
49
19
31
2.3
1.3
PSIS 75/06*
PSIS 75/12*
600
1200
69
92
48
62
2.3
2.7
50   300
100   500
0.6
0.33
56
103
35
65
1.3
0.66
PSIS 100/06*
PSIS 100/12* 
600
1200
93
138
63
94
2.4
2.8
150   450
100   650
0.43
0.22
134
154
82
97
0.66
0.45
PSIS 130/06* 
600
121
83
2.3
25   150
0.33
134
82.3
0.66
PSIS 160/12* 
1200
169
117
2.9
100   600
0.18
154
97
0.45
IGBT Modules
PSSI  25/06* 
PSSI  25/12* 
600
1200
24.5
30
17
21
2.4
2.6
30   270
100   500
1.52
0.96
18.5
26
12
17
3.5
2.3
PSSI  50/06*
PSSI  50/12*   
600
1200
42.5
49
29
33
2.4
3.1
50   270
100   500
0.96
0.6
30
49
19
31
2.3
1.3
PSSI  75/06* 
PSSI  75/12*  
600
1200
69
92
48
62
2.3
2.7
50   300
100   500
0.6
0.33
56
103
35
65
1.3
0.66
PSSI 100/06*
PSSI 100/12*  
600
1200
93
138
63
94
2.4
2.8
150   450
100   650
0.43
0.22
134
154
82
97
0.66
0.45
PSSI 130/06* 
600
121
83
2.3
25   150
0.33
134
82.3
0.66
PSSI 160/12* 
1200
169
117
2.9
100   600
0.18
154
97
0.45
PSSI 45D/06 
600
69
48
2.3
50   300 
0.6
134
82
0.66
PSSI 46D/06 
600
69
48
2.3
50   300 
0.6
134
82
0.66
 
Type 
VCES
Voltage
Grade
V 
IC25
TC =
25°C
IGBT
A 
IC80
TC =
80°C
IGBT
A 
VCE(sat) Saturation
Voltage
(typical) Tj=25 °C
V 
Eoff
Tj=125 °C
IGBT
mJ 
RthJC

IGBT
K/W  
IF25
TC =
25 °C DIODE
A  
IF80
TC =
80 °C DIODE
A 
IGBT Modules
PSII  6/12*
PSII 15/12*
PSII 24/06*
1200
1200
600
6
18
19
4.1
14
14
3.9
2.3
1.9
0.2
1.1
0.3
3.1
1.4
1.7
12
15
21
8
10
14
PSII 35/06
600
31
21
1.9
0.7
1.3
35
22
PSII 30/06
PSII 30/12 
600
1200
42.5
49
29
33
2.4
3.1
1
3.4
0.96
0.6
30
49
19
30
PSII 50/06 
600
69
48
2.3
1.4
0.6
56
35
PSII 75/06
PSII 75/12  
600
1200
90
90
60
60
2.4
2.7
2.2
6.7
0.43
0.33
130
100
80
60
PSII 100/06
PSII 100/12 
600
1200
120
130
80
90
2.3
2.8
2.3
10.5
0.33
0.22
130
150
80
100
 
Type 
VCES
Voltage Grade
V 
IC
Current
Rating
@
75°C
A 
ICM
Maximum
Current
Rating
A 
VCE(SAT)
Saturation
Voltage
(Typical)
V 
Ets
Total
Switchig
Energy
mJ 
Viso
Isolation
Voltage
kV 
  
RthJC 
per IGBT
diode
Chip
IGBT Modules
PSTG 25 HDT 06
PSTG 25 HDT 08
PSTG 25 HDT 12 
600
800
1200 
25
25
25 
75
75
75 
1,9
1,9
1,9 
4
4
4 
3,0
3,0
3,0 
1,1    4,0
1,1    4,0
1,1    4,0
PSTG 25 HTT 06
PSTG 25 HTT 08
PSTG 25 HTT 12 
600
800
1200 
25
25
25 
75
75
75 
1,9
1,9
1,9 
4
4
4 
3,0
3,0
3,0 
1,1    4,0
1,1    4,0
1,1    4,0
PSTG 50 HST 06
PSTG 50 HST 08
PSTG 50 HST 12 
600
800
1200 
50
50
50 
150
150
150 
1,9
1,9
1,9 
8
8
8 
3,0
3,0
3,0 
0,83   2,0
0,83   2,0
0,83   2.0
PSTG 75 HST 06
PSTG 75 HST 08
PSTG 75 HST 12 
600
800
1200 
75
75
75 
225
225
225 
1,9
1,9
1,9 
12
12
12 
3,0
3,0
3,0 
0,55   1,33
0,55   1,33
0,55   1,33
Products

Single Phase Bridges
Three Phase Bridges
AC Controller Modules
Fast Diode Modules
Standard Diode Modules
Power Diodes
Thyristor Modules
Subassemblies
IGBT Modules
MOSFET Modules
Solid State Relays
Trigger Unites

Datasheets
Brand Introduction

Our Brand
POWER-SEM IGBT DRIVERS

Agent Brand
POWERSEM GmbH
ALCON Electronics
Links
德国宝德芯半导体公司
艾肯电子
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Contact Us

BEJING POWER-SEM ELECTRONIC TECHNIQUE CO.,LTD
Address:Room 1902,Building C, zhongguancun SCI-Tech Development Building,34 zhongguancun South Avenue Haidian District, Beijing
Phone:+86-10-6219 5630 / 5631 / 5632
Fax:+86-10-6219 5633
Postcode:100081
Mail: sales@power-sem.com

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Mail: hongkong@power-sem.com
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Version 2009-07$